Intel and Micron 25 Nanometer NAND Technology

Intel and Micron Technology introduced the first 25 nanometer (nm) NAND technology. 25nm NAND enables larger storage capacity for smartphones, personal music, media players (PMPs), and solid-state drives (SSDs). The 25nm process produces 8 gigabytes (GB) of storage in a single NAND device. NAND flash memory stores data and other media contained in consumer electronics products, retaining information even when the power is turned off.

The 25nm, 8GB device is sampling now and is expected to enter mass production in the second quarter of 2010. The device is manufactured by IM Flash Technologies (IMFT), which is Intel and Micron’s NAND flash joint venture. It measures just 167mm2, which is small enough to fit through the hole in the middle of a compact disc (CD), yet packs more than 10 times the data capacity of that CD (a standard CD holds 700 megabytes of data).

For consumer electronics manufacturers, the device provides the highest-density in a single 2 bits-per-cell multi-level cell (MLC) die that will fit an industry-standard, thin small-outline package (TSOP). Multiple 8GB devices can be stacked in a package to increase storage capacity. The new 25nm 8GB device reduces chip count by 50% compared to previous process generations, allowing for smaller, yet higher density designs and greater cost efficiencies. For example, a 256GB solid-state drive (SSD) can now be enabled with just 32 of these devices (versus 64 previously), a 32GB smartphone needs just four, and a 16GB flash card requires only two.

More information: Intel | Micron Technology