STGW30N120KD and STGW40N120KD Insulated Gate Bipolar Transistors

The STGW30N120KD and the STGW40N120KD, from STMicroelectronics, are Insulated Gate Bipolar Transistors (IGBTs). The STGW30N120KD and the STGW40N120KD have low energy loss when conductin (like an ordinary IGBT) and also reduce losses while switching. The new series is rated for 1200V operation, which allows use at higher AC line voltages such as 440V or 480V. The STGW30N120KD and STGW40N120KD are for applications up to 30A and 40A, respectively. They are in full production and are available, respectively, at $2.50 and $2.80 each, in quantities of 5000 pieces.

STMicroelectronics STGW30N120KD and the STGW40N120KD Insulated Gate Bipolar Transistors (IGBTs)STGW30N120KD and the STGW40N120KD IGBTs Features

  • Low on-losses
  • High current capability
  • Low gate charge
  • Short circuit withstand time of 10 µs
  • IGBT co-packaged with an ultra fast free-wheeling diode

The STGW30N120KD and the STGW40N120KD IGBTs achieve power savings using ST’s PowerMESH process, and deliver greater all-round energy efficiency. Lower switching losses allow a higher operating frequency, which, in turn, permits smaller and lower-cost components in power-control circuits. In addition, the IGBTs’ compact industry-standard TO-247 package saves component count by also integrating the ultra-fast freewheeling diode required by most circuits.

The 1200V IGBTs are capable of surviving short circuits lasting up to 10 microseconds, making them resistant to common causes of motor-controller failures, such as an error in the gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation. By improving reliability, the STGW30N120KD and STGW40N120KD save repair and replacement, leading to fewer service calls and reducing the cost of ownership for end users.

More info: STMicroelectronics Insulated Gate Bipolar Transistors