Jazz Semiconductor® recently released the MOSVAR model libraries in its 0.13 and 0.18-micron AIMS technology platforms targeting wireless and other communication products. The new model improves simulation accuracy reducing product development time and is integrated as a standard component in Jazz’s Design Enablement platform that also includes the previously announced Jazz Inductor Toolbox (JIT) and X-Sigma statistical simulation suite. MOSVAR model libraries are currently available to Jazz customers for its 0.13 and 0.18-micron processes.
The MOSVAR model is an advanced surface potential based MOS Varactor model compatible with the PSP MOSFET model and was approved and released by the semiconductor industry Compact Model Council (CMC) in December 2007 as the first industry standard MOS Varactor model. Jazz engineers contributed heavily to the model development, working closely with Arizona State University and other CMC member companies. The MOSVAR model provides critical advantages to the RF analog design space where circuit design requires accurate, scalable compact models for the active transistors and passive components in a given technology. This includes MOS varactors, which provide the critical frequency tuning for circuits such as voltage-controlled oscillators (VCOs).
The new varactor model incorporates recent advances in MOS device physics and modeling and is based on the state-of-the-art surface potential based formulation. In addition, the new model provides MOS varactor specific gate current models and physical geometry and process parameter based parasitic modeling. Key device performances of capacitance and quality factor Q are accurately modeled over voltage, frequency, and geometry. The model contains physical process parameters, enabling simulation of changes in device characteristics associated with the changes in fabrication process. The scalability of the model enables simulation of critical trade-offs in VCO design such as gain and phase noise.
More info: Jazz Semiconductor