4/20/2004 - TriQuint Semiconductor, Inc. (Nasdaq: TQNT) introduced a new round of high-performance products designed to meet the needs of point-to-point radio / satellite communications, and DoD electronic warfare, communications, and radar subcontractor / manufacturers. The new products offer exceptional electrical performance and the ruggedness required by battlefield and high-demand industrial applications.
The TGA2509, an ultra wideband power amplifier (PA) with adjustable gain control (AGC), offers world class electrical performance and increased environmental robustness, making it ideal for defense and commercial amplifier applications including electronic warfare (EW), electronic counter measures (ECM), radar, and digital radio.
The TGA2509 delivers greater than 1-watt of saturated power in the 2-16GHz band. It also provides 17dB of small-signal gain and 25dB of gain control over the 2-22GHz band. The new TGA2509 is manufactured utilizing TriQuint’s proven GaAs power pHEMT device technology and 3 metal-layer interconnect (3MI) design technology, delivering outstanding performance and robustness in a very compact footprint (7.5 square mm). A data sheet for this product is available at: http://www.triquint.com/company/divisions/millimeter_wave/docs/TGA2509/TGA2509-EPU.pdf
The TGA2512 wideband LNA is ideal for applications where higher gain is required and self-bias is desired. Offering high gain of 27dB from 5-15GHz, the TGA2512 provides excellent noise performance with typical midband NF less than 1.4dB, while the balanced topology offers good return loss typically below -17dB.
The TGA2512 is designed for maximum ease of use. The large input FET can handle up to 21dBm of input power reliably, while the built-in gain control provides 15dB (typical) control range. The part may be assembled in self-biased mode, using a single plus 5V supply connection to either side of the chip, or in gate-biased mode allowing the user to control the current for a particular application.
In self-biased mode the TGA2512 offers 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 13dBm. Its small size of 2.46 square mm allows ease of use in compact multi-chip-modules (MCMs). A data sheet for this product is available at: http://www.triquint.com/company/divisions/millimeter_wave/docs/TGA2512/TGA2512-EPU.pdf
All of the above MMICs are 100% DC and RF tested on-wafer to ensure performance compliance. Packaged MMICs as well as military and space level screening are also available on selected products.
TriQuint Semiconductor, Inc. (Nasdaq/FSE: TQNT) is a leading supplier of high performance products for communications applications. The company focuses on the specialized expertise, materials and know-how for RF/IF and optical applications. The company enjoys diversity in its markets, applications, products, technology and customer base. Markets include wireless phones, base stations, optical networks, broadband and microwave equipment, and aerospace and defense. TriQuint provides customers with standard and custom product solutions as well as foundry services. Products are based on advanced process technologies including gallium arsenide, indium phosphide, silicon germanium, and surface acoustic wave (SAW). TriQuint customers include major communications companies worldwide. TriQuint has manufacturing facilities in Oregon, Texas, Pennsylvania and Florida, as well as production assembly plants in Costa Rica and Mexico, plus sales/application support offices in China and design centers in New England, Germany and Taiwan. All manufacturing and production facilities are registered to the ISO9001:2000 international quality standard.
TriQuint is headquartered at 2300 NE Brookwood Parkway, Hillsboro, OR 97124 and can be reached at 503/615-9000 (fax 503/615-8900). Visit the TriQuint web site at http://www.triquint.com.
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