3/30/2004 - TriQuint Semiconductor, Inc. announced the introduction of its high-volume TQHBT3 InGaP heterojunction bipolar transistor (HBT) process fabricated in their 150mm Oregon wafer manufacturing facility. This process, the next generation evolution of TriQuint’s mature, high-volume TQHBT process, enables designers of RF amplifiers for cellphone, WLAN, WiMax and broadband power applications to achieve increased gain, power level and efficiency for a given device size due to higher transistor performance.
"The TQHBT3 process offers our foundry customers improved performance for several key parameters important for their power amplifier applications" said Rob Christ, TriQuint's Foundry Marketing Director. “TQHBT3 features higher beta, more gain per stage, improved power added efficiency, and world class ruggedness.”
The TQHBT3 process is an extension of TriQuint’s current InGaP HBT process, which has been in high-volume production for over 3 years. TriQuint Process Engineers listened to customer inputs and optimized the transistors in many ways including improved thermal uniformity, higher efficiency in linear and saturated modes, and smaller transistor footprint without sacrificing parasitic or isolation parameters. TQHBT3 also features TriQuint’s proven, highly flexible three layer metal system with over 6 microns of gold thickness. Die size for a given power level or function can be reduced leading to lower part cost and printed circuit board area utilized. TQHBT3 features 2-micron and 3-micron emitter width transistors.
“For high-power and high-ruggedness applications, like GSM and CDMA power amplifiers where 2-micron emitter processes are not optimal,” added Christ, “TQHBT3 also has 3-micron emitter transistors with RF power performance equal to or better than the best 2-micron foundry processes.” For higher frequency and digital applications, TQHBT3 also offers 2-micron emitter transistors available on the same wafer.
The process datasheet is available on the TriQuint website at: www.triquint.com/prodserv/divisions/foundry/docs/TQHBT3.pdf. TQHBT3 is available for pre-production immediately; Full production process release is scheduled for third quarter 2004. Design Kits and device models are available now. Please contact Aurea Taylor, product Marketing Manager at email@example.com for additional technical information.
Preliminary Process Features
TriQuint Semiconductor, Inc. (Nasdaq/FSE: TQNT) is a leading supplier of high performance products for communications applications. The company focuses on the specialized expertise, materials and know-how for RF/IF and optical applications. The company enjoys diversity in its markets, applications, products, technology and customer base. Markets include wireless phones, base stations, optical networks, broadband and microwave equipment, and aerospace and defense. TriQuint provides customers with standard and custom product solutions as well as foundry services. Products are based on advanced process technologies including gallium arsenide, indium phosphide, silicon germanium, and surface acoustic wave (SAW). TriQuint customers include major communications companies worldwide. TriQuint has manufacturing facilities in Oregon, Texas, Pennsylvania and Florida, as well as production assembly plants in Costa Rica, Mexico and China, and design centers in New England, Germany and Taiwan. All manufacturing and production facilities are registered to the ISO9001:2000 international quality standard.
TriQuint is headquartered at 2300 NE Brookwood Parkway, Hillsboro, OR 97124 and can be reached at 503/615-9000 (fax 503/615-8900). Visit the TriQuint web site at http://www.triquint.com.
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