QDR Co-Development Team Committed to SRAM for High-speed Networking

4/3/2003 - The QDRTM SRAM Co-Development Team announced their continued commitment to defining, developing and delivering innovative, industry-standard static random access memories (SRAM) for the high-speed networking market. Over the last four years, the mutual cooperation of industry leaders — including Cypress, IDT, NEC, Samsung, and Hitachi — has ensured complete interoperability and true second sourcing of high-performance SRAM products. Today, a majority of companies developing next-generation switches and routers are using QDR SRAM devices.

“The QDR SRAM Co-Development Team is moving full speed ahead,” said Rob Sloan, product-marketing manager for Cypress’s Memory Products Division. “Responding to strong customer demand, the team is dedicated to the standard we’ve developed over the past four years and is in the process of developing a third generation of QDR memories.”

The QDR SRAM architecture incorporates extensive input from networking industry leaders. Initial product availability was announced in third calendar quarter of 2000. Quad Data Rate SRAMs are the first generation of SRAMs aimed specifically at the communications market. QDR-II, the second generation of Quad Data Rate SRAMs, adds new features and functions to the QDR product family, including increased clock frequencies, echo clocks, and lower core voltage (1.8V) that reduce power. The Co-Development team also offers DDR and DDR-II SRAMs for systems that do not require simultaneous reads and writes. To learn more about QDR SRAM product offerings visit www.qdrsram.com.

About QDR
In 1999, the QDR SRAM Co-Development Team was created to define a new family of SRAM architectures for high-performance communications applications. Participating companies work closely together to ensure multiple sources for the new QDR SRAMs by developing pin- and function-compatible products. The QDR family of SRAM products incorporates extensive input from networking industry leaders. QDR SRAM devices have two ports running independently at twice the rate of conventional synchronous memories, resulting in four data items per clock cycle. The QDR SRAM family of products includes Quad Data Rate and Double Data Rate common and separate I/O definitions. Depending on the application, products in the QDR SRAM family can more than double SRAM device efficiency per pin. Additional information on the QDR SRAM technologies, including roadmaps, is available on our website www.qdrsram.com.

Quad Data RateTM SRAM and QDRTM SRAM comprise a new family of products developed by Cypress, IDT, NEC, and Samsung.

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