3/7/2003 - Electronic Design News (EDN) has named a Texas Instruments Incorporated (TI) (NYSE: TXN) technology engineer and two TI products as finalists in EDN´s 2002 "Innovator of the Year" and "Innovation of the Year" awards competition. By leveraging its technology leadership and engineering talent in signal processing, TI is able to deliver truly unique solutions that continue to drive innovation and creativity.
For a third year in a row, a TI digital signal processor (DSP) has been chosen as a finalist in the DSP category. The dual-core OMAP5910 is an enhanced application processor that brings real-time DSP performance and lower power consumption benefits to multimedia-enhanced applications. TI´s THS4302, a wideband fixed gain amplifier and the industry´s first device manufactured in a complementary bipolar silicon-germanium process (BiCom-III), is selected as a finalist in the analog ICs and discrete semis category. Dr. Badih El-Kareh, who was key in the development of the BiCom-III process technology, has been chosen as a finalist in the "Innovator of the Year" category. To vote for the three TI finalists, please visit www.edn.com
OMAP5910 processor is unique to the marketplace in that it is the first heterogeneous processor (combining a RISC-based microprocessor and a DSP) developed and targeted for broad market multimedia-rich applications, including biometrics, web pads, gaming consoles, personal medical instrumentation and point-of-sale terminals. Combining in a single device TI´s TMS320C55xTM DSP core and TI-enhanced ARM925TM microprocessor, the OMAP5910 processor optimizes the performance of both real-time, processing-intensive tasks and control functions. When a RISC processor performs both tasks, performance of each is compromised. However, by combining an ARM processor (suited to orchestrating command and control) with a DSP (ideal for computation-intensive signal processing tasks), system performance can be optimized, with specific tasks performed by the most appropriate device. (www.omap.com)
As the first product introduced in a new family of high-performance fixed gain amplifiers, the THS4302 increases speed by 3X over comparable devices. With high speed and low distortion, the device is well suited for driving high-resolution data converters for a wide dynamic range in digital signal processing. Manufactured in TI´s new BiCom-III process, the high amplifier bandwidth benefits wireless infrastructure equipment such as base stations and relay stations, allowing them to pack more channels with wider bandwidth into less space. As well as being an attractive alternative to radio frequency (RF) amps, the THS4302 class AB op amp allows advanced semiconductor test equipment to keep pace with future generations of high-performance products that are now in development. Additional product designs, such as variable-gain and differential amplifiers, high-speed ADC and read-channels are now making use of this new technology.
Dr. Badih El-Kareh led the team that developed TI´s BiCom-III process technology – the industry´s first complementary bipolar silicon-germanium process. The development required several novel features to meet the needs of high-performance analog applications. The process is the first to integrate both NPN- and PNP-type bipolar transistors to take advantage of the exceptionally high speeds of SiGe. The complementary bipolar transistors enable op amp and high-performance mixed-signal product designs to increase speed up to 3X while reducing noise by as much as one half. Devices designed with the process operate much faster, over wider operating ranges, and with greater precision than comparable products.
The EDN awards program is dedicated to honoring truly outstanding engineering products in the electronics industry. A panel of EDN technical editors selected TI from hundreds of entries, and winners will be chosen by EDN readers through an online ballot on EDN Access Web site at www.edn.com from March 6 through March 24. Winners will be announced at an awards banquet on April 22 in San Francisco, and then publicly in the special section of the May 1, 2003 EDN issue.
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