TriQuint Develops First Gallium Arsenide E-D pHEMT Foundry Process

12/16/2003 - TriQuint Semiconductor, Inc. announced the introduction of the high-volume TQPED pHEMT process fabricated in their 150mm Oregon wafer manufacturing facility. This process will enable designers of RF front-end components to increase integration levels due to the inclusion of both enhancement- and depletion-mode pHEMT transistors, on-chip passives, three-level interconnects and substrate vias. By combining control functions with an advanced, high-performance pHEMT process, designers can achieve higher levels of IC integration and performance than previously possible with single-mode transistor processes.

"Customers have increasingly been asking for the performance achievable in GaAs pHEMT technology," said Rob Christ, TriQuint's Director of Marketing in Oregon. “The TQPED process allows customers to increase circuit functionality by integrating features such as logic and control circuitry directly on the IC instead of off-chip while taking advantage of the performance characteristics of our highly-manufacturable pHEMT technology.”

The TQPED process is an extension of TriQuint’s current pHEMT process, which has a history of high-volume production. The two pHEMT transistor types are targeted at functions such as low noise amplifiers, high isolation switches, converters, power amplifiers, and combinations of these blocks. The ability to integrate all of these circuit functions, including passive components, leads to smaller physical devices and ultimately lower cost, due to both the reduction in the number of components and printed circuit board area for a wide variety of products.

"TriQuint has a long history of leadership with integrated enhancement-mode and depletion-mode transistor processes, starting with the world's first commercially viable E-D MESFET process in 1986,” added Christ. "By moving this capability to pHEMT technology, TQPED is the next major step for integrating analog and control functions for today's important wireless applications." These applications include RF front-ends, WLAN transceivers, direct broadcast satellite receivers, digital radios, and general RF/mixed signal communications products.

The Advance Process datasheet is available on the TriQuint website at: Early access for select customers will be available in the first quarter of 2004; General availability and full production process release is scheduled for third quarter, 2004. A preliminary Design Kit and pHEMT device models are available now. Please contact Aurea Taylor, Product Marketing Manager at for additional technical information.

Preliminary Process Features

TriQuint Semiconductor, Inc. (Nasdaq: TQNT) is a leading supplier of high performance products for communications applications. The company focuses on the specialized expertise, materials and know-how for RF/IF and optical applications. The company enjoys diversity in its markets, applications, products, technology and customer base. Markets include wireless phones, base stations, optical networks, broadband and microwave equipment, and aerospace and defense. TriQuint provides customers with standard and custom product solutions as well as foundry services. Products are based on advanced process technologies including gallium arsenide, indium phosphide, silicon germanium, and surface acoustic wave (SAW). TriQuint customers include major communications companies worldwide. TriQuint has manufacturing facilities in Oregon, Texas, Pennsylvania and Florida, as well as production assembly plants in Costa Rica Mexico and China, and design centers in New England, Germany and Taiwan. All manufacturing and production facilities are certified to the ISO9001 international quality standard.

TriQuint is headquartered at 2300 NE Brookwood Parkway, Hillsboro, OR 97124 and can be reached at 503/615-9000 (fax 503/615-8900). Visit the TriQuint web site at

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