Atmel Shrinks SiGe1-Power Bipolar 0.8 Micron Process to .5

10/10/2003 - Atmel® Corporation (Nasdaq: ATML) announced the release of its new 0.5 micron Silicon Germanium (SiGe) HBT bipolar semiconductor technology SiGe2-Power. This technology offers designers additional performance at a reasonable cost for RF applications with even higher frequency and higher power requirements. The new SiGe2-Power technology is a shrink version of Atmel's SiGe1-Power bipolar 0.8 micron process which has been in high-volume production since 1999.

This technology supports simultaneous use of two available transistor types, with switching speeds of 35/45 GHz cut-off frequency, 90 GHz cut-off for power gain, and breakdown voltages of 6/4 V. The new 3-layer metal system introduced with SiGe2-Power has been optimized for high current densities. Stacked vias enable design engineers to improve the performance and layout of their power amplifier and front-end designs. The transistor performance improvement facilitates high gains, especially for RF applications above 2 GHz. This helps to eliminate the number of stages and enables simpler, cost-effective designs.

"Cost efficiency, optimized power-gain, and high-speed performance of Atmel's SiGe2-Power bipolar technology make this new semiconductor process ideal for today's high-power wireless communications IC design for WLAN, UMTS, CDMA and DECT" said Stephan la Barre, Atmel's Foundry Marketing Manager for SiGe Bipolar.

A preliminary version of the design kit for SiGe2-Power is available now, the complete design kit will be available in December 2003. Atmel also offers Multi Project Wafer runs (MPW or "pizza masks") for low-cost prototyping as well as assembly and test services for all SiGe processes. The first SiGe2-Power MPW run will start in November 2003, MPWs will be continued quarterly.

Atmel operates 5 wafer manufacturing facilities using leading-edge technologies. Its extensive manufacturing is also made available to customers who want to access silicon foundry for their products. In addition to SiGe, Atmel's foundry service includes state-of-the-art production lines for CMOS NVM, BiCMOS, Bipolar and BCDMOS/ BCD-on-SOI technologies that benefit from Atmel's strong experience in statistical methods and manufacturing tools.

Further information on Atmel's SiGe2-Power Foundry offer can be obtained via

CDMA = Code-Division Multiple Access
DECT = Digital Enhanced Cordless Telephone
HBT = Hetero Bipolar Transistors
WLAN = Wireless Local Area Network
UMTS = Universal Mobile Telephone System
NVM = Nonvolatile Memory

About Atmel
Founded in 1984, Atmel Corporation is headquartered in San Jose, California with manufacturing facilities in North America and Europe. Atmel designs, manufactures and markets worldwide, advanced logic, mixed-signal, nonvolatile memory and RF semiconductors. Atmel is also a leading provider of system-level integration semiconductor solutions using CMOS, BiCMOS, SiGe, and high-voltage BCDMOS process technologies.

Atmel's SiGe2-Power information may be retrieved at: Atmel's SiGe2-Power information may be retrieved at:

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