1/15/2003 - Committed to advancing the use of Indium Phosphide (InP) for IC applications, Vitesse Semiconductor Corp. (Nasdaq:VTSS) announced it is the first company to provide InP HBT foundry services through MOSIS, a leading provider of low-cost prototyping and small-volume production services for IC (and optical IC) development. By working directly with MOSIS, customers will have access to Vitesse.s proprietary InP VIP-1Ô technology. The VIP-1 process includes high performance SHBT devices with other active and passive devices and multiple levels of metal interconnect. This process has been qualified for production usage and has an expected turnaround time for prototype circuits of 13 weeks, which is more than two times faster than competitive technologies such as SiGe. InP foundry services from Vitesse and MOSIS are available today, with quarterly fabrication runs initially planned.
The VIP-1 process offers circuit designers the benefits of both high-speed and high-voltage operation suitable for digital, analog, and RF circuits at 10Ghz or higher. The process uses four-inch diameter semi-insulating substrates and is designed for high performance and high yield. The key active device is a SHBT, characterized by fT =150GHz, FMAX =150GHz (at IC=1mA/µm), and BVCEO in excess of 4.5V. The process also includes resistors and capacitors, and three layers of metal interconnect. Device models and design rules are supported in the Cadence design environment and the robust process supports junction temperatures of 125°C.
"Vitesse is building on its past success in the manufacturing of III-V integrated circuits to make a cost-effective InP IC technology available to a broad user base. The access to volume manufacturing capability at a low cost and fast turnaround time is key to the wide spread adoption and usage of InP technology," said Ray Milano, vice president of Physical Media Devices at Vitesse.
The silicon-like interconnect and volume manufacturing capability developed by Vitesse makes this process technology ideal for many applications requiring the performance or optoelectronic properties of InP such as high-voltage drivers, high-frequency amplifiers, high-speed DACs and ADCs, adaptive RF electronics, automotive radar, low loss waveguides and optical components such as photodetectors. Circuits, including Vitesse.s 10Gbps RZ modulator driver, 4:1 MUX and limiting amplifier, that were developed using this process have already been deployed into commercial telecommunications systems.
To demonstrate the abilities of the process, Vitesse produced the industry.s most complex InP integrated circuit, a 40Gbps 16:1 MUX with integrated PRBS 231-1 generator, which contains close to 5000 HBTs. Vitesse will continue to advance the uses of InP technology through the development of the next generation process: VIP-2Ô, a dual HBT InP process with fT = 300GHz and BVCEO in excess of 10V.
"Vitesse's technology will provide many exciting opportunities for applications," said Wes Hansford, MOSIS deputy director. "More importantly, this program will also provide users with a smooth transition to large volume production as needed."
MOSIS will provide access to device models and design rules as well as reticle composition and overall schedule coordination. The circuit elements provided will include continuously scaleable parameterized cell transistors, resistors and capacitors, and ESD structures. Models are also available in ADS for microwave circuit design activity. For more information contact firstname.lastname@example.org email@example.com
Vitesse is a leading designer and supplier of innovative, high-performance integrated circuits (ICs) and optical modules used in next generation networking and optical communications equipment. The Company's products address the needs of Enterprise, Access, Metro, Core, and Optical Transport network equipment manufacturers who demand a robust combination of high-speed, high-service delivery and low-power dissipation in their products. In concert with its broad communications product portfolio, Vitesse also develops ICs for storage area networking and enclosure management. Vitesse is headquartered in Camarillo, Calif. Company and product information is available by calling 1-800-VITESSE or at http://www.vitesse.com/.
MOSIS, founded in 1981 and originally funded by DARPA, has moved into commercial, research and consumer markets. Benefiting the most from this prototyping process is the customer. Once prototyping is complete and the design is ready for dedicated fabrication, the customer goes directly to the foundry. The parts, already fabricated and tested in the prototyping stage, are now ready for full production. This streamlined development saves resources and time, accelerating the product's time to market.
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