Atmel Offers Its Most Advanced 45-GHz to 70-GHz Silicon Germanium BiCMOS Technology for RF Foundry Services

7/9/2002 - Atmel® Corporation (Nasdaq: ATML) announced today the introduction of its 70-GHz SiGe BiCMOS process technology, the AT46700, to its suite of foundry services. As Atmel's most advanced SiGe BiCMOS technology to date, the AT46700 broadens Atmel's current offering of foundry services, including the AT46000, which was developed for use in telecommunications and high-speed data applications up to 12 GHz. The target customers for the AT46700 initiative include fabless semiconductor companies and manufacturers of wireless data communications products such as wireless LAN, cellular and satellite communications applications. The total process offering affords the system designer bipolar speeds of 45 GHz to 70GHz at 3.3 volt CMOS with a 5.0 volt I/O option, and a complete digital standard cell library.

The AT46700 and AT46000 processes provide many optional add-on features and devices for application specific product designs in addition to the CMOS and bipolar transistor suite. They also include low-noise isolated NMOS transistors, multiple capacitors (poly-plate and MIM (Q=80 at 2GHz)), multiple resistor types (nwell, P+/N+, S/D, poly), diodes, varactors, and inductors.

A design reference manual and a Cadence Design Kit are available for the AT46000 process and will be available for the AT46700 process in 4Q02. Accurate mixed signal simulation between the digital, analog and RF logic is supported. For prototyping, customers can choose between a full engineering run, or lower cost multi-project-wafers. Die cost on multi-project wafers is size dependent.

"We are a high-volume producer of both mixed-signal and wireless semiconductors and now we can offer our customers an enabling SiGe BiCMOS process for developing their system-on-a-chip solutions. Using our design kit we currently have multiple customers evaluating silicon prototypes for next generation telecommunication and high-speed data applications," said Chris Baumann, Director of BiCMOS Products.

SiGe BiCMOS offers benefits, which are unattainable by conventional silicon BiCMOS technologies; it enables lower noise, higher switching speed, and lower power consumption. This technology is the most advanced cost- effective semiconductor process for telecommunications and high-speed data applications and it provides an ideal platform for tomorrow's solutions for these rapidly expanding markets. For more information about SiGe BiCMOS please visit

About Atmel
Founded in 1984, Atmel Corporation is headquartered in San Jose, California with manufacturing facilities in North America and Europe. Atmel designs, manufactures and markets worldwide, advanced logic, mixed-signal, nonvolatile memory and RF semiconductors. Atmel is also a leading provider of system-level integration semiconductor solutions using CMOS, BiCMOS, SiGe, and high-voltage BCDMOS process technologies.

Atmel Corporation 2002. All rights reserved. Atmel, the Atmel logo and combinations thereof are registered trademarks, and others contained herein are trademarks, of Atmel Corporation. Other terms and product names in this document may be the trademarks of others.

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