RF Micro Devices Begins Production In Second GaAs HBT Fabrication Facility

1/3/2002 - RF Micro Devices, Inc. (NASDAQ: RFMD), a leading provider of proprietary radio frequency integrated circuits (RFICs) for wireless communications applications, announced today that it has begun production in its second Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) fabrication facility (fab), which is used to fabricate semiconductor wafers.

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