Fujitsu and Toshiba Announce Second-Generation FCRAM with Enhanced Performance up to 200 Megahertz

1/21/2002 - Further demonstrating their leadership in high-performance DRAM technology, Fujitsu Microelectronics America, Inc. (FMA) and Toshiba America Electronic Components, Inc. (TAEC) today introduced second-generation Fast Cycle Random Access Memory (FCRAM)TM for high-speed networking, network server and Internet server applications. This new generation of FCRAMs offers significant performance enhancements over the previous generation, achieving fast performance up to 200 megahertz (MHz), a random cycle time of 25 nanoseconds (ns) and bandwidth of 400 megabits per second (Mbps).

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