MoSys Unveils Ultra-High Reliability 1T-SRAM-R Embedded Memory Technology

1/28/2002 - MoSys (NASDAQ:MOSY) today announced its 1T-SRAM-RTM embedded memory technology option for high performance integrated circuits in communications and other applications that require very high reliability, immunity to soft errors and lowest manufacturing cost. Fabricated in standard logic processes and employing the same, simple, industry-standard SRAM interface, 1T-SRAM-R memory macros can directly replace other embedded SRAMs, achieving lower cost and higher reliability without changes to system design.

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